光功率計(jì)(光強(qiáng)度計(jì))選型指南
· 光電二管探頭: 這些探頭設(shè)計(jì)用于單色光源或近單色光源的功率測(cè)量,因?yàn)樗鼈兙哂胁ㄩL(zhǎng)相關(guān)響應(yīng)。這些探頭根據(jù)輸入光功率和波長(zhǎng)輸出電流。電流輸入到跨阻放大器中,該放大器輸出一個(gè)正比于輸入電流的電壓。
· 熱功率探頭: 這些熱電堆探頭由在超寬波長(zhǎng)范圍內(nèi)光譜響應(yīng)相對(duì)平坦的材料制成,它們適用于寬帶光源( 例如LED和SLD)的功率測(cè)量。熱功率探頭的輸出電壓與輸入光功率成正比。
· 熱釋電能量計(jì)探頭: 我們的熱釋電探頭通過(guò)熱釋電效應(yīng)產(chǎn)生一個(gè)輸出電壓,適合測(cè)量脈沖光源,重復(fù)率被探測(cè)器的時(shí)間常數(shù)限制。這些探頭輸出與輸入脈沖能量成正比的峰值電壓。
1.1
光電二管功率探頭 |
Detector Type |
Sensor Family |
Applications |
Item # |
Wavelength |
Energy or Power Range |
Detector Type |
Aperture |
Response Time |
探頭 |
General Purpose |
S120VC |
200 - 1100 nm |
50 nW - 50 mW |
Si |
Ø9.5 mm |
<1 µsa |
|
S120C |
400 - 1100 nm |
50 nW - 50 mW |
Ø9.5 mm |
|||||
S121C |
400 - 1100 nm |
500 nW - 500 mW |
Ø9.5 mm |
|||||
S122C |
700 - 1800 nm |
50 nW - 40 mW |
Ge |
Ø9.5 mm |
||||
|
Power Measurements in |
S130VC |
200 - 1100 nm |
Dual Range: |
Si |
Ø9.5 mm |
||
S130C |
400 - 1100 nm |
Dual Range: |
Ø9.5 mm |
|||||
S132C |
700 - 1800 nm |
Dual Range: |
Gi Slim |
Ø9.5 mm |
||||
|
Measure Power at the |
S170C |
350 - 1100 nm |
10 nW - 150 mW |
Si |
18 mm x 18 mm |
||
Power Measurements for |
S140C |
350 - 1100 nm |
1 µW - 500 mW |
Si |
Ø5 mm |
|||
S142C |
350 - 1100 nm |
5 µW - 5 W |
Ø12 mm |
|||||
S144C |
800 - 1700 nm |
100 nW - 500 mW |
InGaAs |
Ø5 mm |
||||
S145C |
800 - 1700 nm |
1 µW - 3 W |
Ø12 mm |
|||||
S146C |
900 - 1650 nm |
10 µW - 20 W |
Ø12 mm |
|||||
S148C |
1200 - 2500 nm |
1 µW - 1 W |
Ø5 mm |
|||||
S180C |
2900 - 5500 nm |
1 µW - 3 W |
MCT (HgCdTe) |
Ø7 mm |
||||
Fiber Power Measurements and |
S150C |
350 - 1100 nm |
100 pW - 5 mW |
Si |
Ø5 mm |
|||
S151C |
400 - 1100 nm |
1 nW - 20 mW |
Ø5 mm |
|||||
S154C |
800 - 1700 nm |
100 pW - 3 mW |
InGaAs |
Ø5 mm |
||||
S155C |
800 - 1700 nm |
1 nW - 20 mW |
a. 光電二管探頭的響應(yīng)時(shí)間。使用這些探頭的功率計(jì)的實(shí)際響應(yīng)時(shí)間受到您的功率計(jì)表頭的更新頻率所限制。
1.2
熱功率探頭 |
Detector Type |
Sensor Family |
Applications |
Item # |
Wavelength |
Energy or Power Range |
Detector Type |
Aperture |
Response Time |
熱功率探頭 |
General Broadband |
S302C |
190 nm - 25.0 µm |
100 µW - 2 W |
Stabilized Thermal |
Ø12 mm |
3 sb |
|
S310C |
190 nm - 25.0 µm |
10 mW - 10 W |
Thermal Surface |
Ø20 mm |
<1 sb |
|||
S314C |
190 nm - 11.0 µm |
10 mW - 40 W |
Ø25 mm |
|||||
S322C |
250 nm - 11.0 µm |
100 mW - 200 W |
Ø25 mm |
1 sb |
||||
Power Measurements in |
S305C |
190 nm - 25.0 µm |
10 mW - 5 W |
Ø10 mm |
<1 sb |
|||
Broadband Optical Power |
S401C |
190 nm - 20.6 µm |
10 µW - 1 W (3W)c |
Stabilized Thermal |
Ø10 mm |
|||
|
Measure Power at the |
S175C |
300 nm - 10.6 µm |
100 µW - 2 W |
Thermal Volume |
18 mm x 18 mm |
<2 s |
|
|
Applications with |
S350C |
190 nm - 1.1 µm |
10 mW - 40 W |
Thermal Surface |
Ø40 mm |
1 sb |
|
S370C |
400 nm - 5200 nm |
10 mW - 10 W |
Thermal Volume Absorber |
Ø25 mm |
3 sb |
|||
S470C |
250 nm - 10.6 µm |
100 µW - 5 W |
Ø15 mm |
<2 sb |
a. 對(duì)于熱功率探頭,響應(yīng)時(shí)間受探頭材料限制。熱功率探頭和功率計(jì)表頭設(shè)計(jì)成在探頭的單個(gè)時(shí)間常數(shù)之后就能確定入射功率。因此,相比于其它熱功率探頭,我們的C系列熱功率探頭具有相對(duì)短的響應(yīng)時(shí)間。
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